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Nguyễn Văn Quang, Lê Thị Diễm Hằng, Phan Thị Kim Loan, Trần Mạnh Trung, Nguyễn Tư, Tống Thị Hảo Tâm(1), Lê Tiến Hà, Đào Xuân Việt, Phạm Thành Huy, Đỗ Quang Trung(2)

SINGLE-PHASED WARM WHITE-LIGHT-EMITTING ZnO:Al PHOSPHOR FOR SOLID-STATE LIGHTING APPLICATIONS

BỘT HUỲNH QUANG ĐƠN PHA PHÁT XẠ ÁNH SÁNG TRẮNG ẤM ZnO:Al ỨNG DỤNG TRONG CÔNG NGHỆ CHIẾU SÁNG RẮN

Tạp chí Khoa học và Công nghệ - Đại học Thái Nguyên

2019

11

Bột huỳnh quang ZnO pha tạp Al3+ được chế tạo thành công bằng phương pháp khuếch tán bề mặt. Kết quả nghiên cứu cấu trúc tinh thể cho thấy sau khi sử dụng năng lượng nhiệt khuếch tán ion Al3+ vào trong mạng nền đã làm cho các đỉnh nhiễu xạ của pha tinh thể lục giác của ZnO dịch chuyển về góc 2q lớn hơn làm cho thể tích ô cơ sở của bột ZnOAl giảm. Kết quả khảo sát phổ huỳnh quang theo nhiệt độ và nồng độ pha tạp ion Al3+ cho thấy rằng khi nhiệt độ tăng, nồng độ ion Al3+ khuếch tán vào trong mạng nền tăng và tạo ra nhiều sai hỏng trong mạng nền làm mở rộng vùng phát xạ trong vùng ánh sáng nhìn thấy về phía ánh sáng đỏ. Với mẫu bột ZnOAl 3%mol ủ ở nhiệt độ 800 °C trong 2 giờ cho phổ phát xạ có cường độ mạnh nhất tại bước sóng 542 nm và bán độ rộng đỉnh phổ ~ 186 nm bao chùm toàn bộ vùng ánh sáng nhìn thấy. Thử nghiệm chế tạo LED sử dụng bột ZnOAl phủ lên chip UV-LED cho phát xạ ánh sáng trắng ấm với nhiệt độ màu T = 4067 K và hệ số trả màu cao CRI = 87. Các kết quả nghiên cứu nhận được cho thấy bột huỳnh quang ZnOAl có tiềm năng ứng dụng trong chế tạo điốt phát quang ánh sáng trắng.

Al-doped ZnO powder was successfully fabricated by a surface diffusion method. The c-haracterization of the crystal structure shows that the diffraction peaks of the hexagonal crystal phase of ZnO shifted to a larger angle of 2q, following by the decrease of cell volume of ZnOAl powder after using the thermal energy to diffuse Al3+ ions into the host lattice. The photoluminescence spectra of obtained products showed that when the temperature increases, a higher concentration of Al3+ ion considerably diffuses into the ZnO host lattice and cre-ates many defects following by a red shift of emission band in the visible region. By optimizing the synthesis condition, the PL of ZnOAl (3%mol) sample annealed at 800 ° C for 2 hours shows the highest emission intensity peak at 542 nm with a full width at half maximum (FWHM) bandwidth of ~ 186 nm, covering the whole visible region. After coating, ZnOAl phosphor on a UV-LED chip, the as-received LED exhibits a warm white light emitting with the correlated color temperature (CCT) of 4067 K and a high color rendering index (CRI) of 87. Therefore, ZnOAl phosphors show a great potential to be used in the manufacture of white light-emitting diodes.

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