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Mạc Trung Kiên, Phạm Kim Ngọc, Raja Das, Nguyễn Hữu Tuân, Dương Anh Tuấn*, Trần Đăng Thành, Phan Bách Thắng(1)

Cải thiện hệ số công suất nhiệt điện trong hợp chất Mg3Sb2 pha tạp Si cho ứng dụng chuyển đổi nhiệt điện của vật liệu

Enhancement of thermoelectric power factor in Si-doped Mg3Sb2 compound for thermoelectric converting applications

Tạp chí Khoa học và Công nghệ Việt Nam - B

2022

11B

1

Mg3Sb2được biết đến là vật liệu bán dẫn vùng cấm hẹp có độ dẫn điện và đặc tính nhiệt điện phụ thuộc nhiều vào cấu trúc và hàm lượng tạp chất. Trong nghiên cứu này, để cải thiện tính chất chuyển đổi nhiệt điện của Mg3Sb2, các tác giả tiến hành pha tạp Si theo tỷ lệ khác nhau (x=0,05; 0,1; 0,15; 0,25 và 0,3) vào vị trí của Sb trong hợp chất Mg3Sb2-xSix nhằm nâng cao độ dẫn điện mà không làm giảm hệ số Seebeck của vật liệu nền...

Mg3Sb2 is a narrow band gap semiconductor with electrical conductivity and thermoelectric properties dependent on structure and doping elements. In this study, to improve the thermoelectric properties of Mg3Sb2, the authors doped Si at different ratios (x=0.05, 0.1, 0.15, 0.25, and 0.3) into Sb sites as the formula Mg3Sb2-xSix to improve the electrical conductivity of doping samples while maintaining a high value of the Seebeck coefficient...

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