Currently, silicon nanowires (SiNWs) are attracting attention as promising candidate materials for developing the next-generation solar cells to realize both low cost and high efficiency due to their unique structural, electrical, and optical properties. In this paper, a vertical-aligned SiNWs array has been prepared by metal-assistant chemical etching technique and implemented on SiNW array textured solar cells for photovoltaic application. The shape and size of SiNWs were controlled by etching time of 30 min, 45 min and 60 min with the length of SiNW s of 4 um, 6 um and 8 um, respectively. The etching rate was estimated to be about 133 om per minute. The optical properties of a SiNWs array with different lengths were investigated in terms of optical reflection property. Less than 6 percent reflection ratio from 300 nm to 800 nm wavelength was achieved. In addition, I-V characteristic was used to estimate the dependence of the SiNWs length on the performance of SiNWs based solar cell. Conservation efficiencies were achieved of 1.71 percent, 2.19 percent, and 2.39 percent corresponding to 4 um, 6 um and 8 um SiNWs in length, respectively.
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