Thông tin nhà nghiên cứu KH&CN

Mã NNC: CB.45796

Đỗ Minh Hoạt

Cơ quan/đơn vị công tác: Trường Đại học Duy Tân

Lĩnh vực nghiên cứu:

  • Danh sách các Bài báo/Công bố KH&CN
  • Danh sách các Nhiệm vụ KH&CN đã tham gia
[1]

High Curie temperature and perpendicular magnetic anisotropy in Mn-doped MoSe2 monolayer induced by O and S impurities

Nguyen Thi Han, J. Guerrero-Sanchez, D.M. Hoat*
Journal of Physics and Chemistry of Solids, 207, 112920 - Năm xuất bản: 2025; ISSN/ISBN:
[2]

Effects of vacancy defects and hole doping on the electronic and magnetic properties of InTe monolayer: A first-principles study

Hoang Van Ngoc, Chu Viet Ha, J Guerrero-Sanchez, DM Hoat*
Materials Science in Semiconductor Processing, 198, 109699 - Năm xuất bản: 2025; ISSN/ISBN:
[3]

A systematic study of the NaMnAs half-Heusler compound from bulk to (001) surfaces as promising spintronic materials

Chu Viet Ha, Somekeo Keovongsa, Armando Reyes-Serrato, J. Guerrero-Sanchez, D. M. Hoat*
RSC Advances,15, 16845-16854 - Năm xuất bản: 2025; ISSN/ISBN:
[4]

Structural, electronic, and magnetic properties of bulk and (001) surfaces NaFeAs half-Heusler alloy: A first-principles study

Chu Viet Ha, Somekeo Keovongsa, Armando Reyes-Serrato, J. Guerrero-Sanchez, D.M. Hoat*
Materials Chemistry and Physics, 130968 - Năm xuất bản: 2025; ISSN/ISBN:
[5]

Tuning the electronic and magnetic properties of Germanium-substituted Armchair and Zigzag graphene nanoribbons: A comprehensive DFT investigation

DM Hoat, Vo Khuong Dien, Tri Pham, Quoc Duy Ho, Huynh Anh Huy, Duy Khanh Nguyen, Vo Duy Dat
Physica E: Low-dimensional Systems and Nanostructures, 172, 116284 - Năm xuất bản: 2025; ISSN/ISBN:
[6]

Termination-dependent electronic and magnetic properties of NaMnAs (001) surface

Minh Hoat Do, Guerrero-Sanchez Jonathan, Viet Ha Chu, Reyes-Serrato Armando
8th International Conference on Advances in Functional Materials - Năm xuất bản: 2024; ISSN/ISBN:
[7]

Electronic and magnetic properties of HfO2 and HfMnO2: First priniciples prediction

D.M. Hoat*, J.F. Rivas-Silva, and Gregorio H. Cocoletzi
Hội nghị Vật lý lý thuyết lần thứ 45 - Năm xuất bản: 2020; ISSN/ISBN:
[8]

A systematic study of GaSe monolayer doped/codoped with transition metals (Mn and Fe) and pnictogen atoms (P and As)

PT Bui, V Van On, J Guerrero-Sanchez, DM Hoat*
Journal of Magnetism and Magnetic Materials 621, 172920 - Năm xuất bản: 2025; ISSN/ISBN:
[9]

DFT Study of Cation Selection Mediated by Functionalized MOenes as Anode Materials for Water Desalination

Luis Angel Alvarado-Leal, Jonathan Guerrero-Sanchez, Héctor Noé Fernández-Escamilla, Do Minh Hoat, Noboru Takeuchi, Eduardo Gerardo Perez-Tijerina
ACS Applied Nano Materials 8 (11), 5494-5502 - Năm xuất bản: 2025; ISSN/ISBN:
[10]

Functionalization of SnS2 monolayer towards spintronic applications by doping with FeXn (X = C and N; n = 1, 3, and 6) clusters

HTP Thuy, VV On, J Guerrero-Sanchez, DM Hoat*
Applied Physics A, 131(3), 219 - Năm xuất bản: 2025; ISSN/ISBN:
[11]

Pnictogen Atom Substitution to Modify the Electronic and Magnetic Properties of SiS2 Monolayer: A DFT Study

NT Han, J Guerrero‐Sanchez, DM Hoat*
Advanced Theory and Simulations 8(2), 2400900 - Năm xuất bản: 2025; ISSN/ISBN:
[12]

Doping Janus MoSSe monolayer with Al/Ga and P/As atoms, and their clusters: effective methods for the band structure and magnetism engineering

DK Nguyen, CV Ha, J Guerrero-Sanchez, DM Hoat*
RSC advances 15 (7), 5096-5104 - Năm xuất bản: 2025; ISSN/ISBN:
[13]

Band structure and magnetism engineering of InSe monolayers through doping with IVA-and VA-group atoms: role of impurities

NT Han, J Guerrero-Sanchez, DM Hoat*
Nanoscale Advances, 7, 1443-1451 - Năm xuất bản: 2025; ISSN/ISBN:
[14]

Electronic and magnetic properties of GeP monolayer modulated by Ge vacancies and doping with Mn and Fe transition metals

H Van Ngoc, V Van On, HTP Thuy, J Guerrero-Sanchez, DM Hoat*
RSC advances 15(2), 1020-1032 - Năm xuất bản: 2025; ISSN/ISBN:
[15]

Antiferromagnetic semiconductor nature in a GeS2 monolayer doped with Mn and Fe transition metals

V Van On, HTP Thuy, J Guerrero-Sanchez, DM Hoat*
Physical Chemistry Chemical Physics 27 (3), 1631-1639 - Năm xuất bản: 2025; ISSN/ISBN:
[16]

Electronic and magnetic properties of the HfO2 monolayer engineered by doping with transition metals and nonmetal atoms towards spintronic applications

NT Han, J Guerrero-Sanchez, DM Hoat*
Nanoscale Advances 7(1), 320-328 - Năm xuất bản: 2025; ISSN/ISBN:
[17]

Modifying the Electronic and Magnetic Properties of ZrO2 Monolayer Through Sp Doping: A First-Principles Study

HTP Thuy, V Van On, J Guerrero-Sanchez, DM Hoat*
Advanced Theory and Simulations, 8(4), 2401253 - Năm xuất bản: 2024; ISSN/ISBN:
[18]

Synergistic effects of vacancy and doping at ge sublattices on the electronic and magnetic properties of new Janus Ge2PAs monolayer

HTP Thuy, V Van On, R Ponce-Pérez, J Guerrero-Sanchez, DM Hoat*
Materials Science in Semiconductor Processing 184, 108826 - Năm xuất bản: 2024; ISSN/ISBN:
[19]

Magnetism Engineering in MoS2 Monolayer Through Doping with Superhalogens

NT Tien, TT Hue, SA Aguila, MH Farias, J Guerrero-Sanchez, DM Hoat*
Journal of Inorganic and Organometallic Polymers and Materials, 35, 2783–2791 - Năm xuất bản: 2024; ISSN/ISBN:
[20]

d0 magnetism engineering in the low-buckled hexagonal SiS monolayer: A first-principles study

DM Hoat*, J Guerrero-Sanchez
Physica B: Condensed Matter 691, 416334 - Năm xuất bản: 2024; ISSN/ISBN:
[21]

Inducing feature-rich electronic and magnetic properties in PtSe2 monolayer via doping with TMXn clusters (TM= Mn and Fe; X= N and P; n= 3 and 6): A first-principles study

NT Tien, J Guerrero-Sanchez, DM Hoat*
Inorganic Chemistry Communications 168, 112961 - Năm xuất bản: 2024; ISSN/ISBN:
[22]

Electronic and magnetic properties of Janus ZrSSe monolayer doped with V impurity and VX3 (X= C, N, O, and F) clusters

TH Trinh, CV Ha, J Guerrero-Sanchez, DM Hoat*
Physica Scripta 99(10), 105942 - Năm xuất bản: 2024; ISSN/ISBN:
[23]

Unraveling effects of manganese and oxygen substitution on electronic and magnetic properties of ZrS2 monolayer

HA Huy, DK Nguyen, J Guerrero-Sanchez, DM Hoat*
The European Physical Journal Plus 139(9), 815 - Năm xuất bản: 2024; ISSN/ISBN:
[24]

Exploration of new Janus GeBrI monolayer for optoelectronic and spintronic applications

V Van On, J Guerrero-Sanchez, CV Ha, DM Hoat*
Materials Science in Semiconductor Processing 179, 108469 - Năm xuất bản: 2024; ISSN/ISBN:
[25]

Effects of vacancy and Ge substitution in Janus Si2PAs monolayer: site-dependent electronic and magnetic properties

HTP Thuy, V Van On, J Guerrero-Sanchez, DM Hoat*
Applied Physics A 130(8), 571 - Năm xuất bản: 2024; ISSN/ISBN:
[26]

Layer-dependent topological surface states in BiSb

Carlos Antonio Corona García, Rafael Gonzalez Hernandez, Do Minh Hoat, Armando Reyes Serrato, Rodrigo Ponce Pérez, Jonathan Guerrero Sánchez
Materials Today Communications 40, 109628 - Năm xuất bản: 2024; ISSN/ISBN:
[27]

Searching for new two-dimensional spintronic materials: Doping-induced magnetism in graphene-like SrS monolayer

DK Nguyen, J Guerrero-Sanchez, DM Hoat*
Physica E: Low-dimensional Systems and Nanostructures 162, 116003 - Năm xuất bản: 2024; ISSN/ISBN:
[28]

Point defects in hexagonal SiP monolayer: A systematic investigation on the electronic and magnetic properties

CV Ha, R Ponce‐Pérez, J Guerrero‐Sanchez, DM Hoat*
Advanced Theory and Simulations 7 (6), 2400320 - Năm xuất bản: 2024; ISSN/ISBN:
[29]

Regulating the electronic and magnetic properties of a SnSSe janus monolayer toward optoelectronic and spintronic applications

TV Vu, VH Chu, J Guerrero-Sanchez, DM Hoat*
ACS Applied Electronic Materials 6 (5), 3647-3656 - Năm xuất bản: 2024; ISSN/ISBN:
[30]

Inducing d0 magnetism in new SrCl2 monolayer towards spintronic applications

V Van On, R Ponce-Pérez, CV Ha, J Guerrero-Sanchez, DM Hoat*
Physica Scripta 99 (6), 065947 - Năm xuất bản: 2024; ISSN/ISBN:
[31]

Atomic-scale description of 2D Janus MoSO and MoSeO formation: oxidation patterns and band-gap engineering

Jair Othoniel Dominguez Godinez, Héctor Noé Fernández Escamilla, José de Jesús Quijano Briones, José Israel Paez Ornelas, Eduardo Peréz Tijerina, R Ponce-Pérez, DM Hoat, Jonathan Guerrero Sánchez
RSC advances 14 (40), 29160-29167 - Năm xuất bản: 2024; ISSN/ISBN:
[32]

A systematic study of TMOn (TM= V, Cr, Mn, and Fe; n= 3 and 6) clusters embedded in a PtS2 monolayer

NT Tien, J Guerrero-Sanchez, DM Hoat*
Nanoscale Advances 6 (22), 5671-5680 - Năm xuất bản: 2024; ISSN/ISBN:
[33]

Antiferromagnetism in GaS monolayer doped with TM–TM atom pairs (TM= V, Cr, Mn, and Fe)

DM Hoat*, NT Tien, DK Nguyen, J Guerrero-Sanchez
Physical Chemistry Chemical Physics 26 (27), 18657-18666 - Năm xuất bản: 2024; ISSN/ISBN:
[34]

A systematic investigation of chromium and vanadium impurities in a Janus Ga2SO monolayer towards spintronic applications

DK Nguyen, NT Tien, J Guerrero-Sanchez, DM Hoat*
Physical Chemistry Chemical Physics 26 (26), 18426-18434 - Năm xuất bản: 2024; ISSN/ISBN:
[35]

Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications

DK Nguyen, R Ponce-Pérez, J Guerrero-Sanchez, DM Hoat*
RSC Advances, 14 (27), 19067-19075 - Năm xuất bản: 2024; ISSN/ISBN:
[36]

Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms

DM Hoat*, R Ponce-Pérez, CV Ha, J Guerrero-Sanchez
Nanoscale Advances, 6(14), 3602-3611 - Năm xuất bản: 2024; ISSN/ISBN:
[37]

Adsorption effects of acetone and acetonitrile on defected penta-PdSe2 nanoribbons: a DFT study

NT Tien, NH Dang, PTB Thao, KD Vo, DM Hoat, DK Nguyen
RSC Advances, 14(23), 16445-16458 - Năm xuất bản: 2024; ISSN/ISBN:
[38]

Rich essential properties of silicon-substituted graphene nanoribbons: A comprehensive computational study

D.M.Hoat, Vo Khuong Dien, Quoc Duy Ho, Dang Phuc Dam, Nguyen Thanh Tien, and Duy Khanh Nguyen
Physical Chemistry Chemical Physics, - Năm xuất bản: 2024; ISSN/ISBN:
[39]

Engineering the half-metallic and magnetic semiconductor natures in gallium phosphide monolayer towards spintronic applications

Tuan V Vu, J Guerrero-Sanchez, DM Hoat*
Chemical Physics, 582, 112297 - Năm xuất bản: 2024; ISSN/ISBN:
[40]

Two-dimensional antiferromagnetic nodal-line semimetal and spin Hall effect in MnC4

H Fernandez, R Gonzalez-Hernandez, J Paez, DM Hoat, N Takeuchi Tan, J Guerrero-Sanchez, EG Perez-Tijerina
Journal of Physics: Condensed Matter, 36(15), 155801 - Năm xuất bản: 2024; ISSN/ISBN:
[41]

Functionalization of boron phosphide monolayers for spintronic applications by doping with alkali and alkaline earth metals

Phuong Thuy Bui, Vo Van On, J Guerrero-Sanchez, DM Hoat*
Journal of Physics D: Applied Physics, 57(13), 135310 - Năm xuất bản: 2024; ISSN/ISBN:
[42]

Realizing new 2D spintronic materials from the non-magnetic 1T-PdO2 monolayer through vacancy defects and doping

DM Hoat*, Vo Van On, Phan Van Huan, J Guerrero-Sanchez
RSC Advances, 14(10), 7241-7250 - Năm xuất bản: 2024; ISSN/ISBN:
[43]

n/p-doping in buckled honeycomb InAs monolayer using IVA-group impurities

D. M. Hoat* and J. Guerrero-Sanchez
Nanoscale Advances, 6, 1678-168 - Năm xuất bản: 2024; ISSN/ISBN:
[44]

Electronic and magnetic properties of GeS monolayer effected by point defects and doping

Phuong Thuy Bui, Vo Van On, J Guerrero-Sanchez, DM Hoat*
RSC advances, 14(4), 2481-2490 - Năm xuất bản: 2024; ISSN/ISBN:
[45]

Hole doping at Sn sublattice of the buckled honeycomb SnX (X= S and Se) monolayer: an efficient functionalization approach

DM Hoat*, J Guerrero-Sanchez
Materials Advances, 5, 1746-1755 - Năm xuất bản: 2024; ISSN/ISBN:
[46]

Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping

Vo Van On, J Guerrero-Sanchez, DM Hoat*
Physical Chemistry Chemical Physics, 26(4), 3587-3596 - Năm xuất bản: 2024; ISSN/ISBN:
[47]

Effects of transition metals and earth alkaline metals in the ionic honeycomb monolayer sodium bromide towards spintronic applications

Vo Van On, J Guerrero-Sanchez, DM Hoat*
Materials Advances, 5(2), 584-592 - Năm xuất bản: 2024; ISSN/ISBN:
[48]

First‐Principles Study of the C‐and Si‐Doped Buckled Honeycomb PN Monolayer

Vo Van On, Chu Viet Ha, J Guerrero‐Sanchez, DM Hoat*
Advanced Theory and Simulations, 7(1), 2300593 - Năm xuất bản: 2024; ISSN/ISBN:
[49]

A candidate exchange-biased vdW heterostructure based on Cr2NO2 and Cr2CF2 MXenes

R Ponce-Perez, J Guerrero-Sanchez, SJ Gutierrez-Ojeda, HN Fernandez-Escamilla, DM Hoat, Ma G Moreno-Armenta
Materials Today Electronics, 6, 100059 - Năm xuất bản: 2023; ISSN/ISBN:
[50]

Point Defects in Buckled Honeycomb PAs Monolayer: A Systematic Study of Stability, Electronic, and Magnetic Properties

Huynh Anh Huy, Bao‐Thien Nguyen‐Tat, Duy Khanh Nguyen, J Guerrero‐Sanchez, DM Hoat*
Advanced Theory and Simulations, 6(11), 2300416 - Năm xuất bản: 2023; ISSN/ISBN:
[51]

Surface functionalization of graphene-like boron arsenide monolayer: a first-principles study

Duy Khanh Nguyen, R Ponce-Pérez, J Guerrero-Sanchez, DM Hoat*
Journal of Physics: Condensed Matter, 36(5), 055001 - Năm xuất bản: 2023; ISSN/ISBN:
[52]

Spin-Polarized Total-Energy Calculations on Designing Magnetic Single-Atom Catalysts on the ZnO (0001̅) Surface with Pt and Pd

Jimena Magdalena Jacobo-Fernández, Carlos Antonio Corona-García, Rodrigo Ponce-Pérez, Hugo Alejandro Borbón-Nuñez, Do Minh Hoat, Armando Reyes-Serrato, Jonathan Guerrero-Sánchez
ACS Applied Nano Materials, 6(18), 16740-16748 - Năm xuất bản: 2023; ISSN/ISBN:
[53]

2D MnC4: A Room‐Temperature Antiferromagnetic System

Hector Noe Fernandez‐Escamilla, Jose Israel Paez‐Ornelas, Do Minh Hoat, Rafael Gonzalez‐Hernandez, Noboru Takeuchi, Jonathan Guerrero‐Sanchez, Eduardo Gerardo Perez‐Tijerina
Advanced Theory and Simulations, 6(8), 2300193 - Năm xuất bản: 2023; ISSN/ISBN:
[54]

First-principles prediction of 1H-Na2Se monolayer: effects of external strain and point defects associated with constituent atoms

Tuan V Vu, Duy Khanh Nguyen, J Guerrero-Sanchez, DM Hoat*
Physica Scripta, 98(2), 025805 - Năm xuất bản: 2023; ISSN/ISBN:
[55]

First-principles study of indium nitride monolayers doped with alkaline earth metals

Duy Khanh Nguyen, Chu Viet Ha, Le T Hong Gam, J Guerrero-Sanchez, DM Hoat*
RSC Advances, 13(48), 33634-33643 - Năm xuất bản: 2023; ISSN/ISBN:
[56]

Doping-mediated electronic and magnetic properties of graphene-like ionic NaX (X= F and Cl) monolayers

Bich Ngoc Nguyen Thi, Chu Viet Ha, Nghiem Thi Ha Lien, J Guerrero-Sanchez, DM Hoat*
Physical Chemistry Chemical Physics, 25(47), 32569-32577 - Năm xuất bản: 2023; ISSN/ISBN:
[57]

Atomic-scale study of TiO 2-GR nanohybrid formation by ALD: the effect of the gas phase precursor

Jonathan E Rodríguez-Hueso, HA Borbón-Nuñez, R Ponce-Pérez, DM Hoat, N Takeuchi, H Tiznado, Jonathan Guerrero-Sánchez
Nanoscale Advances, 5(20), 5476-5486 - Năm xuất bản: 2023; ISSN/ISBN:
[58]

Functionalization of an ionic honeycomb KF monolayer via doping

Huynh Anh Huy, Duy Khanh Nguyen, Chu Viet Ha, Dang Duc Toan, Hang Nga Nguyen, J Guerrero Sanchez, DM Hoat*
Nanoscale Advances, 517, 4480-4488 - Năm xuất bản: 2023; ISSN/ISBN:
[59]

Electronic and magnetic properties of SnC monolayer doped with 3d transition metals: A first-principles study

HA Huy, DK Nguyen, R Ponce-Pérez, J Guerrero-Sanchez, DM Hoat*
Materials Today Communications, 36,106511 - Năm xuất bản: 2023; ISSN/ISBN:
[60]

Furfural adsorption on the g-C3N4 monolayer: A DFT analysis

Sergio Castillo-Robles, R Ponce-Pérez, JI Paez-Ornelas, DM Hoat, Armando Reyes-Serrato, J Guerrero-Sanchez
Materials Today Communications 35, 106288 - Năm xuất bản: 2023; ISSN/ISBN:
[61]

HfXO (X= S and Se) Janus monolayers as promising two-dimensional platforms for optoelectronic and spintronic applications

DK Nguyen, J Guerrero-Sanchez, DM Hoat*
Journal of Materials Research 38 (9), 2600-2612 - Năm xuất bản: 2023; ISSN/ISBN:
[62]

ZrSe2-HfSe2 lateral heterostructures: stability, fundamental properties, and interline defects

V Van On, HTP Thuy, H Van Ngoc, J Guerrero-Sanchez, DM Hoat*
Applied Physics A 129 (4), 259 - Năm xuất bản: 2023; ISSN/ISBN:
[63]

Feature-rich electronic and magnetic properties in silicene monolayer induced by nitrogenation: A first-principles study

V Van On, JF Rivas-Silva, GH Cocoletzi, J Guerrero-Sanchez, DM Hoat*
Chemical Physics 568, 111844 - Năm xuất bản: 2023; ISSN/ISBN:
[64]

An investigation on the stability, electronic, and optical properties of new MoSO–WSO lateral heterostructures

V Van On, H Van Ngoc, HTP Thuy, J Guerrero-Sanchez, DM Hoat*
Applied Surface Science 613, 155980 - Năm xuất bản: 2023; ISSN/ISBN:
[65]

First principles characterization of C-doped magnetically-enhanced D022-Mn3Ga surfaces

R Ruvalcaba, DM Hoat, JP Corbett, J Guerrero-Sanchez
Computational Materials Science 220, 112027 - Năm xuất bản: 2023; ISSN/ISBN:
[66]

Tuning the electronic and magnetic properties of MgO monolayer by nonmetal doping: A first-principles investigation

V Van On, J Guerrero-Sanchez, DM Hoat*
Materials Today Communications 34, 105422 - Năm xuất bản: 2023; ISSN/ISBN:
[67]

Exploring the ZrXO (X = S and Se) Janus Monolayers for Optoelectronic and Spintronic Applications

DK Nguyen, J Guerrero-Sanchez, DM Hoat*
physica status solidi (RRL)–Rapid Research Letters 17 (3), 2200427 - Năm xuất bản: 2023; ISSN/ISBN:
[68]

Theoretical investigation of the MXene precursors MoxV4-xAlC3 (0 ≤ x ≤ 4)

Ma Guadalupe Moreno-Armenta, J Guerrero-Sánchez, SJ Gutiérrez-Ojeda, HN Fernández-Escamilla, DM Hoat, R Ponce-Pérez
Scientific Reports 13 (1), 3271 - Năm xuất bản: 2023; ISSN/ISBN:
[69]

Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers

Chu Viet Ha, Bich Ngoc Nguyen Thi, Pham Quynh Trang, R Ponce-Pérez, Vu Thi Kim Lien, J Guerrero-Sanchez, DM Hoat*
RSC advances 13 (26), 17968-17977 - Năm xuất bản: 2023; ISSN/ISBN:
[70]

First-principles study of SiC and GeC monolayers with adsorbed non-metal atoms

CV Ha, LT Ha, DK Nguyen, DT Anh, J Guerrero-Sanchez, DM Hoat*
RSC advances 13 (22), 14879-14886 - Năm xuất bản: 2023; ISSN/ISBN:
[71]

Half-metallic and magnetic semiconductor behavior in CdO monolayer induced by acceptor impurities

R Ponce-Pérez, J Guerrero-Sanchez, DM Hoat*
Physical Chemistry Chemical Physics 25 (20), 14266-14273 - Năm xuất bản: 2023; ISSN/ISBN:
[72]

Novel germanene–arsenene and germanene–antimonene lateral heterostructures: interline-dependent electronic and magnetic properties

Chu Viet Ha, Bich Ngoc Nguyen Thi, Pham Quynh Trang, R Ponce-Pérez, J Guerrero-Sanchez, DM Hoat*
Physical Chemistry Chemical Physics 25 (20), 14502-14510 - Năm xuất bản: 2023; ISSN/ISBN:
[73]

Searching for d 0 spintronic materials: bismuthene monolayer doped with IVA-group atoms

Duy Khanh Nguyen, To Vinh Bao, Nguyen Anh Kha, R Ponce-Pérez, J Guerrero-Sanchez, DM Hoat*
RSC advances 13 (9), 5885-5892 - Năm xuất bản: 2023; ISSN/ISBN:
[74]

Novel electronic and magnetic features in XC (X= Si and Ge) monolayers induced by doping with group-VA atoms

CV Ha, DK Nguyen, DT Anh, J Guerrero-Sanchez, DM Hoat*
New Journal of Chemistry 47 (6), 2787-2796 - Năm xuất bản: 2023; ISSN/ISBN:
[75]

Exploration of new direct gap semiconductor Na2X (X= S and Se) monolayers

PT Bui, DK Nguyen, J Guerrero-Sanchez, DM Hoat*
Applied Surface Science 606, 154809 - Năm xuất bản: 2022; ISSN/ISBN:
[76]

Theoretical prediction of two-dimensional BC2X (X = N, P, As) monolayers: ab initio investigations

A Bafekry, M Naseri, M Faraji, MM Fadlallah, DM Hoat, HR Jappor, M Ghergherehchi, D Gogova, H Afarideh
Scientific Reports 12 (1), 22269 - Năm xuất bản: 2022; ISSN/ISBN:
[77]

Chemical functionalization of low-buckled SiGe monolayer: Effects on the electronic and magnetic properties

Duy Khanh Nguyen, J Guerrero-Sanchez, JF Rivas-Silva, Tuan V Vu, Gregorio H Cocoletzi, DM Hoat*
Materials Science in Semiconductor Processing 150, 106949 - Năm xuất bản: 2022; ISSN/ISBN:
[78]

Tuning the half-metallicity in reconstructed CrN (111) surfaces

Juan C. Moreno Hernández, Rodrigo Ponce-Pérez, Gregorio Hernández Cocoletzi, Do Minh Hoat, Noboru Takeuchi
Surfaces and Interfaces, 35, 102420 - Năm xuất bản: 2022; ISSN/ISBN:
[79]

Defective and doped MgO monolayer as promising 2D materials for optoelectronic and spintronic applications

Vo Van On, J Guerrero-Sanchez, R Ponce-Pérez, Tuan V Vu, JF Rivas-Silva, Gregorio H Cocoletzi, DM Hoat*
Materials Science in Semiconductor Processing 149, 106876 - Năm xuất bản: 2022; ISSN/ISBN:
[80]

Strain Effects on the Two-Dimensional Cr2N MXene: An Ab Initio Study

Sandra Julieta Gutiérrez-Ojeda, Rodrigo Ponce-Pérez, Daniel Maldonado-Lopez, Do Minh Hoat, Jonathan Guerrero-Sánchez, Ma Guadalupe Moreno-Armenta
ACS omega 7 (38), 33884-33894 - Năm xuất bản: 2022; ISSN/ISBN:
[81]

Exploring the sensing ability of B‐ and Si‐doped WS2 monolayer toward CO and NO gas

DK Nguyen, DQ Hoang, DM Hoat*
International Journal of Quantum Chemistry 122 (15), e26916 - Năm xuất bản: 2022; ISSN/ISBN:
[82]

Electronic and magnetic properties of the WSO Janus monolayer engineered by intrinsic defects

DK Nguyen, J Guerrero-Sanchez, TV Vu, R Ponce-Pérez, DM Hoat*
Surfaces and Interfaces 32, 102114 - Năm xuất bản: 2022; ISSN/ISBN:
[83]

Modifying electronic and magnetic properties of the β-Sb monolayer by doping with III-, IV-, and V-group atoms

DK Nguyen, TV Bao, J Guerrero-Sanchez, DM Hoat*
Physica E: Low-dimensional Systems and Nanostructures 142, 115315 - Năm xuất bản: 2022; ISSN/ISBN:
[84]

Designing doping strategy in arsenene monolayer for spintronic and optoelectronic applications: a case study of germanium and nitrogen as dopants

V Van On, CV Ha, DT Anh, J Guerrero-Sanchez, DM Hoat*
Journal of Physics: Condensed Matter 34 (35), 355301 - Năm xuất bản: 2022; ISSN/ISBN:
[85]

Study of vacancy, voids, atom adsorption and domain substitution in hexagonal gallium nitride monolayer

V Van On, J Guerrero-Sanchez, R Ponce-Pérez, DM Hoat*
Surfaces and Interfaces 30, 101898 - Năm xuất bản: 2022; ISSN/ISBN:
[86]

First-principles calculations to investigate Structural, electronic, and optical properties of MgF2 monolayer in 1T-phase and 2H-phase using hybrid functional

Hoang Van Ngoc, Nguyen Thanh Tung, Duy Khanh Nguyen, Vo Van On, JF Rivas-Silva, Gregorio H Cocoletzi, DM Hoat*
Chemical Physics 557, 111473 - Năm xuất bản: 2022; ISSN/ISBN:
[87]

Prediction of a Beryllium Phosphide Iodide Monolayer as a Photocatalyst for Water Splitting by Density Functional Theory

M Naseri, DM Hoat, N Sabbaghi, N Fatahi, K Salehi
Journal of Electronic Materials 51 (5), 2077-2082 - Năm xuất bản: 2022; ISSN/ISBN:
[88]

Predicting the stability and electronic structure of alkali metal aurides

AMG Carranza, RG Diaz, DM Hoat, JM Siqueiros, J Guerrero-Sanchez
Journal of Physics: Condensed Matter 34 (23), 235901 - Năm xuất bản: 2022; ISSN/ISBN:
[89]

First‐principles investigation of the (HfSe2)4−n–(HfSSe)n (n = 0, 1, 2, 3, 4) lateral heterostructures

Vo Van On, J Guerrero‐Sanchez, R Ponce‐Pérez, JF Rivas‐Silva, Gregorio H Cocoletzi, DM Hoat*
International Journal of Quantum Chemistry 122 (6), e26857 - Năm xuất bản: 2022; ISSN/ISBN:
[90]

Structural, Electronic, and Magnetic Properties of Sr1−xMnxF2 Alloys Studied by First-principles Calculations

Hoat Do Minh*, Jonathan Guerrero Sanchez, Rodrigo Ponce Perez, Juan Francisco Rivas Silva, Gregorio Hernandez Cocoletzi
Communications in Physics 32 (2), 157 - Năm xuất bản: 2022; ISSN/ISBN:
[91]

First principles prediction of the stable MgFCl Janus monolayer with tunable properties

DM Hoat, Duy Khanh Nguyen, Dolores García-Toral, Vo Van On, JF Rivas-Silva, Gregorio H Cocoletzi
Physica E: Low-dimensional Systems and Nanostructures 137, 115023 - Năm xuất bản: 2022; ISSN/ISBN:
[92]

Controlling magnetic-semiconductor properties of the Si-and Al-doped blue phosphorene monolayer

V Van On, J Guerrero-Sanchez, DM Hoat*
Journal of Physics D: Applied Physics 55 (16), 165302 - Năm xuất bản: 2022; ISSN/ISBN:
[93]

Introducing the 1H-Na2S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties

DK Nguyen, J Guerrero-Sanchez, DM Hoat*
Physical Chemistry Chemical Physics 24 (44), 27505-27514 - Năm xuất bản: 2022; ISSN/ISBN:
[94]

A new family of NaTMGe (TM= 3d transition metals) half-Heusler compounds: the role of TM modification

Tuan V Vu, Duy Khanh Nguyen, J Guerrero-Sanchez, JF Rivas-Silva, Gregorio H Cocoletzi, DM Hoat*
RSC advances 12 (40), 26418-26427 - Năm xuất bản: 2022; ISSN/ISBN:
[95]

Theoretical prediction of alkali oxide M 2 O (M= Na and K) monolayers and formation of their Janus structure

Vu Thi Kim Lien, Vo Van On, J Guerrero-Sanchez, JF Rivas-Silva, Gregorio H Cocoletzi, DM Hoat*
New Journal of Chemistry 46 (36), 17386-17393 - Năm xuất bản: 2022; ISSN/ISBN:
[96]

Antiferromagnetic ordering in the TM-adsorbed AlN monolayer (TM= V and Cr)

Duy Khanh Nguyen, Tuan V Vu, DM Hoat*
RSC advances 12 (26), 16677-16683 - Năm xuất bản: 2022; ISSN/ISBN:
[97]

Exploring a silicene monolayer as a promising sensor platform to detect and capture NO and CO gas

Duy Khanh Nguyen, Duc-Quang Hoang, DM Hoat*
RSC advances 12 (16), 9828-9835 - Năm xuất bản: 2022; ISSN/ISBN:
[98]

Ferromagnetic half-metallicity of the cubic NaMgO3 perovskite: from bulk to (001) surfaces

Vo Van On, J Guerrero-Sanchez, R Ponce-Pérez, JF Rivas-Silva, Gregorio H Cocoletzi, DM Hoat*
Physical Chemistry Chemical Physics - Năm xuất bản: 2022; ISSN/ISBN:
[99]

Developing feature-rich electronic and magnetic properties in the β-As monolayer for spintronic and optoelectronic applications by C and Si doping: a first-principles study

DM Hoat, Duy Khanh Nguyen, Asadollah Bafekry, Vo Van On, Bakhtiar Ul Haq, Duc-Quang Hoang, Gregorio H Cocoletzi, JF Rivas-Silva
Surfaces and Interfaces - Năm xuất bản: 2021; ISSN/ISBN:
[100]

Effects of the Gas Molecules (H2, CO, NO) and Transition Metal Atoms (Cr, Au) Adsorbed on Hexagonal Boron Nitride Layers

Duc-Quang Hoang, Dinh-Khang Pham, Tuan Van Vu, Thanh-Dung Hoang, Do Minh Hoat, Vinh-Ai Dao
Journal of the Physical Society of Japan - Năm xuất bản: 2021; ISSN/ISBN:
[101]

Engineering the electronic and magnetic properties of nitrogene monolayer and bilayer by doping: A first-principles study

DM Hoat*, Duy Khanh Nguyen, J Guerrero-Sanchez, R Ponce-Pérez, Vo Van On, JF Rivas-Silva, Gregorio H Cocoletzi
Applied Surface Science - Năm xuất bản: 2021; ISSN/ISBN:
[102]

Strain effect on the electronic and optical properties of 2D Tetrahexcarbon: a DFT-based study

DM Hoat, Shirin Amirian, Hamidreza Alborznia, Amel Laref, AH Reshak, Mosayeb Naseri
Indian Journal of physics - Năm xuất bản: 2021; ISSN/ISBN:
[103]

Structural, electronic, magnetic, and optical properties of new TiXY (X= F and Cl; Y= S, Se and Te) Janus monolayers: A first-principles study

DM Hoat, Duy Khanh Nguyen, Vo Van On, JF Rivas-Silva, Gregorio H Cocoletzi
Optik - Năm xuất bản: 2021; ISSN/ISBN:
[104]

Strain-tunable electronic, optical and thermoelectric properties of BP monolayer investigated by FP-LAPW calculations

DM Hoat*, Mosayeb Naseri, Nguyen TT Binh, Tuan V Vu, JF Rivas-Silva, Mohammed M Obeid, Gregorio H Cocoletzi
Physica B: Condensed Matter - Năm xuất bản: 2021; ISSN/ISBN:
[105]

Investigations of thermoelectric properties of ZnO monolayers from the first-principles approach

Bakhtiar Ul Haq, S AlFaify, Thamraa Alshahrani, R Ahmed, Q Mahmood, DM Hoat, SA Tahir
Physica E: Low-dimensional Systems and Nanostructures - Năm xuất bản: 2021; ISSN/ISBN:
[106]

MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic and optical properties

A Bafekry, M Faraji, Do M Hoat, M Shahrokhi, MM Fadlallah, F Shojaei, SAH Feghhi, M Ghergherehchi, D Gogova
Journal of Physics D: Applied Physics - Năm xuất bản: 2021; ISSN/ISBN:
[107]

Tuning MoSO monolayer properties for optoelectronic and spintronic applications: effect of external strain, vacancies and doping

Duy Khanh Nguyen, J Guerrero-Sanchez, Vo Van On, JF Rivas-Silva, R Ponce-Pérez, Gregorio H Cocoletzi, DM Hoat*
RSC Advances - Năm xuất bản: 2021; ISSN/ISBN:
[108]

Electronic, optical and thermoelectric properties of a novel two-dimensional SbXY (X= Se, Te; Y= Br, I) family: ab initio perspective

A Bafekry, M Faraji, MM Fadlallah, DM Hoat, HR Jappor, I Abdolhosseini Sarsari, M Ghergherehchi, SAH Feghhi
Physical Chemistry Chemical Physics - Năm xuất bản: 2021; ISSN/ISBN:
[109]

Effect of adsorption and substitutional B doping at different concentrations on the electronic and magnetic properties of a BeO monolayer: a first-principles study

A Bafekry, M Faraji, MM Fadlallah, DM Hoat, A Bagheri Khatibani, I Abdolhosseini Sarsari, M Ghergherehchi
Physical Chemistry Chemical Physics - Năm xuất bản: 2021; ISSN/ISBN:
[110]

Exploring the electronic band gap of Janus MoSeO and WSeO monolayers and their heterostructures

Vo Van On, Duy Khanh Nguyen, J Guerrero-Sanchez, DM Hoat*
New Journal of Chemistry - Năm xuất bản: 2021; ISSN/ISBN:
[111]

Two-dimensional Janus semiconductor BiTeCl and BiTeBr monolayers: a first-principles study on their tunable electronic properties via an electric field and mechanical strain

Asadollah Bafekry, S Karbasizadeh, C Stampfl, M Faraji, DM Hoat, I Abdolhosseini Sarsari, SAH Feghhi, M Ghergherehchi
Physical Chemistry Chemical Physics - Năm xuất bản: 2021; ISSN/ISBN:
[112]

Theoretical analysis of the HfS2 monolayer electronic structure and optical properties under vertical strain effects

DM Hoat*, R Ponce-Pérez, Tuan V Vu, JF Rivas-Silva, Gregorio H Cocoletzi
Optik - Năm xuất bản: 2021; ISSN/ISBN:
[113]

The effect of shape and size in the stability of triangular Janus MoSSe quantum dots

JI Paez-Ornelas, R Ponce-Pérez, HN Fernández-Escamilla, DM Hoat, EA Murillo-Bracamontes, María G Moreno-Armenta, Donald H Galván, J Guerrero-Sánchez
Scientific Reports - Năm xuất bản: 2021; ISSN/ISBN:
[114]

Theoretical prediction of the PtOX (X= S and Se) monolayers as promising optoelectronic and thermoelectric 2D materials

Duy Khanh Nguyen, DM Hoat*, Asadollah Bafekry, Vo Van On, JF Rivas-Silva, M Naseri, Gregorio H Cocoletzi
Physica E: Low-dimensional Systems and Nanostructures - Năm xuất bản: 2021; ISSN/ISBN:
[115]

Novel two-dimensional ZnO 2, CdO 2 and HgO 2 monolayers: a first-principles-based prediction

M Faraji, A Bafekry, D Gogova, DM Hoat, M Ghergherehchi, NV Chuong, SAH Feghhi
New Journal of Chemistry - Năm xuất bản: 2021; ISSN/ISBN:
[116]

Two-dimensional buckled tetragonal cadmium chalcogenides including CdS, CdSe, and CdTe monolayers as photo-catalysts for water splitting

M Naseri, A Bafekry, M Faraji, DM Hoat, Mohamed M Fadlallah, M Ghergherehchi, N Sabbaghi, D Gogova
Physical Chemistry Chemical Physics - Năm xuất bản: 2021; ISSN/ISBN:
[117]

Feature‐rich structural, electronic, magnetic and optical properties of the fluorine‐ and nitrogen‐incorporated CaF2 compound

DM Hoat, Duy Khanh Nguyen, Vo Van On, Bakhtiar Ul Haq, JF Rivas‐Silva, Gregorio H Cocoletzi
International Journal of Quantum Chemistry - Năm xuất bản: 2021; ISSN/ISBN:
[118]

Structural, electronic, magnetic and optical properties of CaO induced by oxygen incorporation effects: A first-principles study

Duy Khanh Nguyen, Vo Van On, DM Hoat, JF Rivas-Silva, Gregorio H Cocoletzi
Physics Letters A - Năm xuất bản: 2021; ISSN/ISBN:
[119]

Nitrogen doping and oxygen vacancy effects on the fundamental properties of BeO monolayer: A DFT study

D. M. Hoat, Duy Khanh Nguyen, J. Guerrero-Sanchez, R. Ponce-Pérez, J. F. Rivas-Silva, Vo Van On, Gregorio H. Cocoletzi
Journal of Physics: Condensed Matter - Năm xuất bản: 2021; ISSN/ISBN:
[120]

Opening the germanene monolayer band gap using halogen atoms: An efficient approach studied by first-principles calculations

DM Hoat, Duy Khanh Nguyen, R Ponce-Pérez, J Guerrero-Sanchez, Vo Van On, JF Rivas-Silva, Gregorio H Cocoletzi
Applied Surface Science - Năm xuất bản: 2021; ISSN/ISBN:
[121]

Theoretical prediction of the PtOX (X= S and Se) monolayers as promising optoelectronic and thermoelectric 2D materials

Duy Khanh Nguyen, DM Hoat, Asadollah Bafekry, Vo Van On, JF Rivas-Silva, M Naseri, Gregorio H Cocoletzi
Physica E: Low-dimensional Systems and Nanostructures - Năm xuất bản: 2021; ISSN/ISBN:
[122]

Strain-driven modulation of the electronic, optical and thermoelectric properties of β-antimonene monolayer: A hybrid functional study

DM Hoat, Duy Khanh Nguyen, Asadollah Bafekry, Vo Van On, Bakhtiar Ul Haq, JF Rivas-Silva, Gregorio H Cocoletzi
Materials Science in Semiconductor Processing - Năm xuất bản: 2021; ISSN/ISBN:
[123]

Pressure effects on the electronic, magnetic, thermoelectric, and thermodynamic properties of Mn2CoSi half‐metallic compound

Vo Van On, Duy Khanh Nguyen, DM Hoat, R Ponce‐Pérez, JF Rivas‐Silva, Gregorio H. Cocoletzi
International Journal of Quantum Chemistry - Năm xuất bản: 2020; ISSN/ISBN:
[124]

Fluorinating the graphene-like BeO monolayer: A spin-polarized first principles study of the electronic, magnetic and optical properties

Vo Van On, DM Hoat, Duy Khanh Nguyen, R Ponce-Pérez, Tuan V Vu, JF Rivas-Silva, Gregorio H Cocoletzi
Physica Scripta - Năm xuất bản: 2020; ISSN/ISBN:
[125]

Structural, electronic and optical properties of pristine and functionalized MgO monolayers: a first principles study

DM Hoat, Vo Van On, Duy Khanh Nguyen, Mosayeb Naseri, R Ponce-Pérez, Tuan V Vu, JF Rivas-Silva, Nguyen N Hieu, Gregorio H Cocoletzi
RSC Advances - Năm xuất bản: 2020; ISSN/ISBN:
[126]

First principles analysis of the half-metallic ferromagnetism, elastic and thermodynamic properties of equiatomic quaternary Heusler compound CoCrRhSi

DM Hoat, Duc-Quang Hoang, Nguyen TT Binh, Mosayeb Naseri, JF Rivas-Silva, AI Kartamyshev, Gregorio H Cocoletzi
Materials Chemistry and Physics - Năm xuất bản: 2020; ISSN/ISBN:
[127]

The mechanical, electronic, optical and thermoelectric properties of two-dimensional honeycomb-like of XSb (X = Si, Ge, Sn) monolayers: a first-principles calculations†

Asadollah Bafekry, Fazel Shojai, D. M. Hoat, Masoud Shahrokhi, Mitra Ghergherehchi and C. Nguyen
RSC Advances - Năm xuất bản: 2020; ISSN/ISBN:
[128]

Prediction of a new 2D B2CO monolayer from density functional theory

Mosayeb Naseri, DM Hoat
Computational Materials Science - Năm xuất bản: 2020; ISSN/ISBN:
[129]

First-principles investigation of nonmetal doped single-layer BiOBr as a potential photocatalyst with a low recombination rate

Mohammed M Obeid, C Stampfl, A Bafekry, Z Guan, HR Jappor, CV Nguyen, M Naseri, DM Hoat, NN Hieu, AE Krauklis, Tuan V Vu, D Gogova
Physical Chemistry Chemical Physics - Năm xuất bản: 2020; ISSN/ISBN:
[130]

Electronic, optical and thermoelectric properties of CaO mono- and bi-layers: Theoretical comparative investigation

D. M. Hoat, Mosayeb Naseri, J. F. Rivas-Silva, Gregorio H.Cocoletzi
Optik - Năm xuất bản: 2020; ISSN/ISBN:
[131]

Structural, electronic and optical properties of CdO monolayer and bilayers: Stacking effect investigations

D. M. Hoat, Mosayeb Naseri, Tuan V.Vu, J.F.Rivas-Silva, Nguyen N.Hieu, Gregorio H.Cocoletzi
Superlattices and Microstructures - Năm xuất bản: 2020; ISSN/ISBN:
[132]

Computational prediction of the spin-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as a spin-filter

D. M. Hoat, Duc-Quang Hoang, Mosayeb Naseri, J. F. Rivas-Silva, A. I. Kartamyshev, Gregorio H. Cocoletzi
RSC Advances - Năm xuất bản: 2020; ISSN/ISBN:
[133]

New equiatomic quaternary Heusler compounds without transition metals KCaBX (X = S and Se): Robust half-metallicity and optical properties

D. M. Hoat, Duc-Quang Hoang, Mosayeb Naseri, R. Ponce-Peréz, Nguyen T.T. Binh, J. F. Rivas-Silva, Gregorio H.Cocoletzi
Journal of Molecular Graphics and Modelling - Năm xuất bản: 2020; ISSN/ISBN:
[134]

Mn2CoX (X = P and As) full-Heusler compounds for spintronic applications: Half-metallicity and elastic properties

D. M. Hoat, Nguyen Hoang Giang, Mosayeb Naseri, R. Ponce-Pérez, J. F. Rivas-Silva, Gregorio H. Cocoletzi
Physics Letters A - Năm xuất bản: 2020; ISSN/ISBN:
[135]

P-substitution effects on the electronic structure and thermal properties of the half-metallic half-Heusler NaCrBi compound

D. M. Hoat, Mosayeb Naseri, R. Ponce-Pérez, J. F. Rivas-Silva, A. I. Kartamyshev, Gregorio H. Cocoletzi
Chemical Physics - Năm xuất bản: 2020; ISSN/ISBN:
[136]

LiCl monolayer for UV detection: First principles prediction

D. M. Hoat, Mosayeb Naseri, Nguyen T. T. Binh, J. F. Rivas-Silva, Tuan V. Vu, Gregorio H.Cocoletzi
Physica E: Low-dimensional Systems and Nanostructures - Năm xuất bản: 2020; ISSN/ISBN:
[137]

A comprehensive investigation on electronic structure, optical and thermoelectric properties of the HfSSe Janus monolayer

D. M. Hoat, Mosayeb Naseri, Nguyen N. Hieu, R. Ponce-Pérez, J. F. Rivas-Silva, Tuan V. Vu, Gregorio H. Cocoletzi
Journal of Physics and Chemistry of Solids - Năm xuất bản: 2020; ISSN/ISBN:
[138]

Electronic structure, optical and thermoelectric properties of cadmium chalcogenides monolayers

Mosayeb Naseri, D. M. Hoat, J. F. Rivas-Silva, Gregorio H. Cocoletzi
Optik - Năm xuất bản: 2020; ISSN/ISBN:
[139]

Functionalizing AlN monolayer with hydroxyl group: Effect on the structural and electronic properties

D. M. Hoat, Mosayeb Naseri, Nguyen T. T. Binh, J. F. Rivas-Silva, Tuan V. Vu, Gregorio H.Cocoletzi
Physics Letters A - Năm xuất bản: 2020; ISSN/ISBN:
[140]

Strain tunable electronic and optical properties of 2D orthorhombic Lithium Sulfur Monolayer

D. M. Hoat, Omar Husain Tarawneh, Yazan A. Alsariera, Khaled Salehi, MosayebNaseri
Chemical Physics - Năm xuất bản: 2020; ISSN/ISBN:
[141]

Half-metal effect on the MnAs/InP (0 0 1)-(2 × 4) interface

R. Ponce-Pérez, María Teresa Romero de la Cruz, J. Guerrero-Sánchez, Yuliana Elizabeth Ávila Alvarado, D. M. Hoat, María G.Moreno-Armenta, Gregorio H.Cocoletzi
Computational Materials Science - Năm xuất bản: 2020; ISSN/ISBN:
[142]

DFT prediction of structural, electronic and magnetic properties of Sr0.75TM0.25S (TM is 3d transition metals)

D. M. Hoat
Philosophical Magazine Letters - Năm xuất bản: 2020; ISSN/ISBN:
[143]

An assessment of the structural, electronic, optical and thermoelectric properties of the BaAg2GeS4 compound

Mosayeb Naseri, D. M. Hoat, R. Ponce-Pérez, J. F. Rivas-Silva, Gregorio H.Cocoletzi
Journal of Solid State Chemistry - Năm xuất bản: 2020; ISSN/ISBN:
[144]

2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties

Negin Fatahi, D. M. Hoat, Amel Laref, Shorin Amirian, A. H. Reshak, Mosayeb Naseri
European Physical Journal B - Năm xuất bản: 2020; ISSN/ISBN:
[145]

First principles insight into the structural, electronic, optical and thermodynamic properties of CsPb2Br5 compound

DM Hoat, Mosayeb Naseri, R Ponce-Pérez, JF Rivas-Silva, Gregorio H Cocoletzi
Chemical Physics - Năm xuất bản: 2020; ISSN/ISBN:
[146]

Examining the half-metallicity and thermoelectric properties of new equiatomic quaternary Heusler compound CoVRhGe under pressure

DM Hoat, Mosayeb Naseri
Physica B: Condensed Matter - Năm xuất bản: 2020; ISSN/ISBN:
[147]

Half-metallicity and magnetism in BAs monolayer induced by anchoring 3d transition metals (TM= V, Cr and Mn)

DM Hoat, Mosayeb Naseri, Nguyen N Hieu, R Ponce-Pérez, Hien D Tong, JF Rivas-Silva, Tuan V Vu, Gregorio H Cocoletzi
Superlattices and Microstructures - Năm xuất bản: 2020; ISSN/ISBN:
[148]

Tuning the electronic, photocatalytic and optical properties of hydrogenated InN monolayer by biaxial strain and electric field

Khang D Pham, Tuan V Vu, Tri Nhut Pham, Dat D Vo, Phuc Toan Dang, DM Hoat, Chuong V Nguyen, Huynh V Phuc, Le TN Tu, Lanh Chu Van, Hien D Tong, Nguyen TT Binh, Nguyen N Hieu
Chemical Physics - Năm xuất bản: 2020; ISSN/ISBN:
[149]

Tuning the electronic properties of hydrogenated SiC monolayer through external electric field.

D. M. Hoat, M. Naseri, J. F -Rivas Silva, Gregorio H. Cocoletzi
Hội nghị vật lý chất rắn và khoa học vật liệu toàn quốc lần thứ XI - Năm xuất bản: 2019; ISSN/ISBN:
[150]

Electronic and optical properties of wide band gap Tl3TaS4: A promising surface acoustic wave material

Tuan V Vu, AA Lavrentyev, BV Gabrelian, KF Kalmykova, VV Sidorkin, DM Hoat, Hien D Tong, Duy Phu Tran, OY Khyzhun, Dat D Vo
Optical Materials - Năm xuất bản: 2019; ISSN/ISBN:
[151]

Examining the Uniform Strain Effect on Elastic, Electronic and Optical Properties of CsPbCl3 through FP-LAPW calculations

Mosayeb Naseri, D. M. Hoat, R. Ponce-Pérez, J. F. Rivas-Silva, Gregorio H.Cocoletzi
Chemical Physics - Năm xuất bản: 2019; ISSN/ISBN:
[152]

Electronic and optical properties of Janus ZrSSe by density functional theory

Tuan V. Vu, Hien D. Tong, Duy Phu Tran, Nguyen T. T. Binh, Chuong V. Nguyen, Huynh V. Phucg, D. M. Hoat and Nguyen N. Hieu
RSC Advances - Năm xuất bản: 2019; ISSN/ISBN:
[153]

Reducing the electronic band gap of BN monolayer by coexistence ofP(As)-doping and external electric field

D. M. Hoat, Mosayeb Naseri, R. Ponce-P ́erez, Nguyen N. Hieu, Tuan V. Vu, J. F. Rivas-Silva, Gregorio H.Cocoletzi
Superlattices and Microstructures - Năm xuất bản: 2019; ISSN/ISBN:
[154]

Electronic, optical and photocatalytic properties of fully hydrogenated GeC monolayer

Tuan V.Vu, Nguyen Thi TuyetAnh, D.M.Hoat, Duy PhuTran, Hien D.Tong, Hai L.Luong, Le MinhHieu, Chuong V.Nguyen, Huynh V.Phuc, Nguyen T.T.Binh, Nguyen N.Hieu
Physica E: Low-dimensional Systems and Nanostructures 117, 113857 - Năm xuất bản: 2019; ISSN/ISBN:
[155]

Surface functionalization of GeC monolayer with F and Cl: Electronic and optical properties

Tuan V. Vu, Nguyen Thi Tuyet Anh, Duy PhuTran, D. M. Hoat, Nguyen T.T.Binh, Hien D.Tong, Bui D.Hoi, Chuong V.Nguyen, Huynh V.Phuc, Nguyen N.Hieu
Superlattices and Microstructures - Năm xuất bản: 2019; ISSN/ISBN:
[156]

Structural and electronic properties of chemically functionalized SnC monolayer: A first principles study

D. M. Hoat, Mosayeb Naseri, R. Ponce-P´ereze, Nguyen N. Hieu, J. F. Rivas-Silva, Tuan V. Vu, Hien D. Tong, Gregorio H. Cocoletzi
Materials Researtch Express - Năm xuất bản: 2019; ISSN/ISBN:
[157]

On the structural, electronic, optical and thermoelectric properties of CdIn2Se4 ordered-vacancy compound

D. M. Hoat, Mosayeb Naseri, R. Ponce-Pérez, J. F. Rivas-Silva, Gregorio H. Cocoletzi
Journal of Solid State Chemistry - Năm xuất bản: 2019; ISSN/ISBN:
[158]

Investigation on structural, electronic, magnetic and thermodynamic properties of antiperovskites Mn3XC (X=Al, Zn and Ga)

D. M. Hoat
International Journal of Modern Physics B - Năm xuất bản: 2019; ISSN/ISBN:
[159]

Theoretical prediction of 2D XI2 (X=Si, Ge, Sn, Pb) monolayers by density functional theory

Mosayeb Naseri, D. M. Hoat, Khaled Salehi, Shirin Amirian
Journal of Molecular Graphics and Modelling - Năm xuất bản: 2019; ISSN/ISBN:
[160]

Transition from indirect to direct band gap in SiC monolayer by chemical functionalization: A first principles study

D. M. Hoat, Mosayeb Naseri, Nguyen N. Hieu, R. Ponce-Pérez, J. F. Rivas-Silva, Gregorio H. Cocoletzi
Superlattices and Microstructures - Năm xuất bản: 2019; ISSN/ISBN:
[161]

Computational investigation of the structural, electronic, optical and thermoelectric properties of T2-Al2MgC2 compound

DM Hoat, Mosayeb Naseri, Tuan V Vu, R Ponce-Pérez, JF Rivas-Silva, Gregorio H Cocoletzi
Journal of Solid State Chemistry - Năm xuất bản: 2019; ISSN/ISBN:
[162]

Strain-tunable electronic and optical properties of monolayer GeSe: Promising for photocatalytic water splitting applications

Hong TT Nguyen, Tuan V Vu, Nguyen TT Binh, DM Hoat, Nguyen V Hieu, Nguyen TT Anh, Chuong V Nguyen, Huynh V Phuc, Hamad R Jappor, Mohammed M Obeid, Nguyen N Hieu
Chemical Physics - Năm xuất bản: 2019; ISSN/ISBN:
[163]

Prediction of 2D Li2X (X=Se, Te) monolayer semiconductors by first principles calculations

Mosayeb Naseri, DM Hoat
Physics Letters A - Năm xuất bản: 2019; ISSN/ISBN:
[164]

Biaxial strain and external electric field effects on the electronic structure of hydrogenated GaN monolayer

D. M. Hoat, Mosayeb Naseri, Tuan V. Vu, Hai L. Luong, Nguyen N. Hieu, R. Ponce-Pérez, J. F. Rivas-Silva, Gregorio H. Cocoletzi
Superlattices and Microstructures - Năm xuất bản: 2019; ISSN/ISBN:
[165]

Effect of DFT methods on electronic structure and K-absorption spectra of InPS4: detailed studies of the optical, thermoelectric and elastic properties

Tuan V Vu, Anatoliy A Lavrentyev, Boris V Gabrelian, KF Kalmykova, Dat D Vo, Hien D Tong, D M Hoat, Mohammed Batouche, Hai L Luong, Oleg Y Khyzhun
Materials Research Express - Năm xuất bản: 2019; ISSN/ISBN:
[166]

Electronic and magnetic properties of single-layer boron phosphide associated with materials processing defects

Mohammed M. Obeid, Hamad R. Jappor, Kutaiba Al-Marzoki, D.M. Hoat, Tuan V. Vu, Shaker J. Edrees, Zaher Mundher Yaseen, Majid M. Shukur
Computational Materials Science - Năm xuất bản: 2019; ISSN/ISBN:
[167]

Electronic and Thermoelectric Properties of RbYSn Half-Heusler Compound with 8 Valence Electrons: Spin-Orbit Coupling Effect

D. M. Hoat, Mosayeb Naseri
Chemical Physics - Năm xuất bản: 2019; ISSN/ISBN:
[168]

Tuning the electronic structure of 2D materials by strain and external electric field: Case of GeI2 monolayer

D. M. Hoat, Tuan V.Vu, Mohamme, M. Obeid, Hamad R.Jappor
Chemical Physics - Năm xuất bản: 2019; ISSN/ISBN:
[169]

First principles investigation on elastic, optoelectronic and thermoelectric properties of KYX (X = Ge, Sn and Pb) half-Heusler compounds

Mosayeb Naseri, D. M. Hoat
Journal of Molecular Graphics and Modelling - Năm xuất bản: 2019; ISSN/ISBN:
[170]

Ternary sulfides BaLa2S4 and CaLa2S4 as promising photocatalytic water splitting and thermoelectric materials: First-principles DFT calculations

M Batouche, T Seddik, TV Vu, DD Vo, HD Tong, DM Hoat, OY Khyzhun
International Journal of Hydrogen Energy - Năm xuất bản: 2019; ISSN/ISBN:
[171]

Effect of pressure on structural, electronic and optical properties of SrF2: a first principles study

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas, J. J. Ríos Rámirez
Revista Mexicana de Física - Năm xuất bản: 2018; ISSN/ISBN:
[172]

Engineering the optical and electronic properties of Janus monolayer Ga2SSe by biaxial strain

Hamad Rahman Jappor, Mohammed M. Obeid, Tuan V. Vu, D. M. Hoat, Hoi D. Bui, Nguyen N. Hieu, Shaker J. Edrees, Yeşim Mogulkoc, Rabah Khenata
Superlattices and Microstructures - Năm xuất bản: 2019; ISSN/ISBN:
[173]

Improving the Calculations of Electronic and Magnetic Properties of Sr2CrMoO6 Double-Perovskite with LDA+U and mBJ Potential

D. M. Hoat
Journal of Electronic Materials - Năm xuất bản: 2019; ISSN/ISBN:
[174]

Electronic structure, chemical bonding, optical, elastic and dynamical properties of MeB2 compounds: Effect of transition metal Me = Sc, Ti and Zr

D. M. Hoat
Computational Condensed Matter - Năm xuất bản: 2019; ISSN/ISBN:
[175]

Assessing optoelectronic properties of PbI2 monolayer under uniaxial strain from first principles calculations

D. M. Hoat, Tuan V. Vu, Mohammed M. Obeid, Hamad R. Jappor
Superlattices and Microstructures - Năm xuất bản: 2019; ISSN/ISBN:
[176]

Structural, electronic, optical and thermodynamic properties of AeBi2O6 (Ae = Sr and Ba): Insights from first principles study

D. M. Hoat
Journal of Molecular Graphics and Modelling - Năm xuất bản: 2019; ISSN/ISBN:
[177]

Investigation on new equiatomic quaternary Heusler compound CoCrIrSi via FP-LAPW calculations

D. M. Hoat
Chemical Physics - Năm xuất bản: 2019; ISSN/ISBN:
[178]

Theoretical study of electronic structure, thermoelectric and thermodynamic properties of 2H-AgAlO2

D. M. Hoat
Physica B: Condensed Matter - Năm xuất bản: 2019; ISSN/ISBN:
[179]

Comparative study of structural, electronic, optical and thermoelectric properties of GaS bulk and monolayer

D. M. Hoat
Philosophical Magazine - Năm xuất bản: 2019; ISSN/ISBN:
[180]

Theoretical investigations on physical properties of SrFCuCh (Ch= S and Se)

D. M. Hoat
Journal of Solid State Chemistry - Năm xuất bản: 2019; ISSN/ISBN:
[181]

Investigation on electronic structure and luminescence mechanism of CaF2: Eu3+ from first principles calculations

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Optik - Năm xuất bản: 2019; ISSN/ISBN:
[182]

Electronic structure and thermoelectric properties of Ta-based half-Heusler compounds with 18 valence electrons

D. M. Hoat
Computational Materials Science - Năm xuất bản: 2019; ISSN/ISBN:
[183]

Structural, optoelectronic and thermoelectric properties of antiperovskite compounds Ae3PbS (Ae= Ca, Sr and Ba): A first principles study

D. M. Hoat
Physics Letters A - Năm xuất bản: 2019; ISSN/ISBN:
[184]

Systematic study of structural, electronic, optical and thermodynamic properties of SrFCuTe compound

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Journal of Solid State Chemistry - Năm xuất bản: 2019; ISSN/ISBN:
[185]

Search for new d0 half-metallic materials: theoretical investigation on KCaC1− xSix (x= 0; 0.25; 0.5; 0.75 and 1) compounds

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Chinese Journal of Physics - Năm xuất bản: 2018; ISSN/ISBN:
[186]

Investigation on the structural, elastic, electronic, and magnetic properties of half-metallic Co2MnSi and CoMnIrSi via first-principles calculations

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Journal of Computational Electronics - Năm xuất bản: 2018; ISSN/ISBN:
[187]

First principles study on structural, electronic and optical properties of Ga1− xBxP ternary alloys (x= 0, 0.25, 0.5, 0.75 and 1)

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Physics Letters A - Năm xuất bản: 2018; ISSN/ISBN:
[188]

First principles study of structural, electronic and optical properties of perovskites CaZrO3 and CaHfO3 in cubic phase

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Solid State Communications - Năm xuất bản: 2018; ISSN/ISBN:
[189]

Insight into the structural, elastic, electronic and thermal properties of YMgX4 (X = Co, Ni and Cu) from ab initio calculations

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Materials Research Express - Năm xuất bản: 2018; ISSN/ISBN:
[190]

First principles study of structural, electronic, elastic and thermodynamic properties of cubic HfO2 under pressure

D.M. Hoat, J.F. Rivas Silva, A. Méndez Blas
Physica B: Condensed Matter - Năm xuất bản: 2018; ISSN/ISBN:
[191]

FP-LAPW investigation on structural, electronic and optical properties of Eu2+-doped MF2 (M= Ca and Ba)

D. M. Hoat, J. F. Rivas Silva, A. Méndez Blas
Optik - Năm xuất bản: 2018; ISSN/ISBN:
[192]

Theoretical study of electronic and optical properties of antiferromagnetic β-MnS using the modified Becke Johnson (mBJ) potential

J. F. Rivas Silva, A. Méndez Blas, D. M. Hoat
Journal of Physics and Chemistry of Solids - Năm xuất bản: 2017; ISSN/ISBN:
[1]

Nghiên cứu thiết kế cấu trúc và khảo sát tính chất điện từ của một số vật liệu spintronic tiên tiến bằng lý thuyết phiếm hàm mật độ

Cơ quan quản lý nhiệm vụ/cấp kinh phí: Quỹ phát triển khoa học và công nghệ quốc gia
Thời gian thực hiện: 04/2020 - 04/2023; vai trò: Chủ nhiệm đề tài